Title :
Influence of drain voltage on MOSFET threshold voltage determination by transconductance change and gm/Id methods
Author :
Rudenko, T. ; Kilchytska, V. ; Arshad, M. K Md ; Raskin, J.P. ; Nazarov, A. ; Flandre, D.
Author_Institution :
Inst. of Semicond. Phys., NAS of Ukraine, Kyiv, Ukraine
Abstract :
In this work, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the transconductance and transconductance-to-current-ratio change methods, using analytical modeling and experimental data obtained on UTB SOI MOSFETs.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; MOSFET threshold voltage determination; UTB SOI MOSFET; analytical modeling; drain voltage; transconductance-to-current-ratio change methods; Analytical models; Charge carrier density; Data models; Logic gates; Neodymium; Threshold voltage; Transconductance;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
Conference_Location :
Cork
Print_ISBN :
978-1-4577-0090-3
Electronic_ISBN :
978-1-4577-0089-7
DOI :
10.1109/ULIS.2011.5758012
