• DocumentCode
    3020940
  • Title

    Influence of drain voltage on MOSFET threshold voltage determination by transconductance change and gm/Id methods

  • Author

    Rudenko, T. ; Kilchytska, V. ; Arshad, M. K Md ; Raskin, J.P. ; Nazarov, A. ; Flandre, D.

  • Author_Institution
    Inst. of Semicond. Phys., NAS of Ukraine, Kyiv, Ukraine
  • fYear
    2011
  • fDate
    14-16 March 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the transconductance and transconductance-to-current-ratio change methods, using analytical modeling and experimental data obtained on UTB SOI MOSFETs.
  • Keywords
    MOSFET; semiconductor device models; silicon-on-insulator; MOSFET threshold voltage determination; UTB SOI MOSFET; analytical modeling; drain voltage; transconductance-to-current-ratio change methods; Analytical models; Charge carrier density; Data models; Logic gates; Neodymium; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on
  • Conference_Location
    Cork
  • Print_ISBN
    978-1-4577-0090-3
  • Electronic_ISBN
    978-1-4577-0089-7
  • Type

    conf

  • DOI
    10.1109/ULIS.2011.5758012
  • Filename
    5758012
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3020940