Title :
Modeling and performance of a one stage InP/GaInAs optoelectronic HBT 3-terminal mixer
Author :
Betser, Y. ; Ritter, D. ; Liu, C.P. ; Seeds, A.J. ; Madjar, A.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
A high conversion gain 3-terminal heterojunction photo transistor optoelectronic mixer was demonstrated. The maximum obtained internal mixing efficiency was 11.3 dB. The mixing performance was measured as a function of the DC bias of the device and local oscillator power level. A SPICE based large signal model was employed to simulate the device. The main non-linear effects which contribute to the mixing process were the bias dependence of the dynamic emitter resistance, and the transition from the active to the saturation mode
Keywords :
III-V semiconductors; SPICE; bipolar integrated circuits; gallium arsenide; indium compounds; integrated circuit modelling; integrated optoelectronics; mixers (circuits); optical communication equipment; phototransistors; subcarrier multiplexing; DC bias; InP-GaInAs; SPICE based large signal model; active to saturation mode transition; device simulation; dynamic emitter resistance; high conversion gain 3-terminal heterojunction photo transistor optoelectronic mixer; internal mixing efficiency; local oscillator power level; mixing performance; nonlinear effects; one stage InP/GaInAs optoelectronic HBT 3-terminal mixer; optical subcarrier multiplexing; Distributed feedback devices; Heterojunction bipolar transistors; Indium phosphide; Local oscillators; Nonlinear optics; Optical mixing; Optical modulation; Power system modeling; SPICE; Semiconductor device modeling;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600165
