Title :
First time demonstration of InP p++/n++ tunnel junction
Author :
Vilela, M.F. ; Medelci, N. ; Bensaoula, A. ; Freundlich, A. ; Renaud, P.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
Abstract :
For the first time an InP p++/n++ tunnel junction is demonstrated. InP tunnel diodes with peak current densities up to 1600 A/cm2 and maximum specific resistivities (Vp/1p-peak voltage to peak current ratio) in the range of 10-4 Ω.cm2 were obtained. This high peak current density is comparable to the highest results previously reported for their lattice matched In0.53Ga0.47As counterparts. This achievement is very important for InP/InGaAs tandem solar cell design due to the very high peak current density which allows concentrator applications and also because the tunnel junction material being the same as the tandem´s top solar cell avoids the optical losses observed when using In0.53Ga0.47As tunnel junctions. In this paper we discuss the device characteristics and the influence of the growth conditions on its performance
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; solar cells; tunnel diodes; In0.53Ga0.47As tunnel junctions; InP p++/n++ tunnel junction; InP tunnel diodes; InP-InGaAs; InP/InGaAs tandem solar cell design; chemical beam epitaxy; concentrator applications; growth conditions; high peak current density; maximum specific resistivities; peak current densities; top solar cell; Conductivity; Current density; Diodes; Indium gallium arsenide; Indium phosphide; Lattices; Optical design; Optical materials; Photovoltaic cells; Voltage;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520750
