• DocumentCode
    3021850
  • Title

    TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory

  • Author

    Schmidt, H. ; Walter, D. ; Gliem, F. ; Nickson, B. ; Harboe-Sørensen, R. ; Virtanen, A.

  • Author_Institution
    Tech. Univ. of Braunschweig, Braunschweig
  • fYear
    2008
  • fDate
    14-18 July 2008
  • Firstpage
    38
  • Lastpage
    41
  • Abstract
    We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.
  • Keywords
    NAND circuits; flash memories; integrated circuit testing; NAND-flash memory; SEE tests; SEFI cross sections; TID tests; error percentage; operational mode dependence; stand-by current; storage capacity 8 Gbit; Breakdown voltage; Data structures; Dosimetry; Ionization chambers; Nonvolatile memory; Physics; Solid state circuits; Telemetry; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2008 IEEE
  • Conference_Location
    Tucson, AZ
  • Print_ISBN
    978-1-4244-2545-7
  • Type

    conf

  • DOI
    10.1109/REDW.2008.13
  • Filename
    4638611
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3021850