• DocumentCode
    3021871
  • Title

    Radiation Performance of 1 Gbit DDR2 SDRAMs Fabricated with 80-90 nm CMOS

  • Author

    Ladbury, R. ; Berg, M.D. ; LaBel, K.A. ; Friendlich, M. ; Phan, A. ; Kim, H.

  • Author_Institution
    NASA/GSFC, Greenbelt, MD
  • fYear
    2008
  • fDate
    14-18 July 2008
  • Firstpage
    42
  • Lastpage
    46
  • Abstract
    We present radiation performance of 1 Gbit DDR2 SDRAMs from three different vendors, including susceptibilities to TID damage and to destructive and nondestructive SEE.
  • Keywords
    CMOS memory circuits; DRAM chips; radiation hardening (electronics); CMOS; DDR2 SDRAMs; TID damage; radiation performance; second generation double-data- rate; single-event effects; size 80 nm to 90 nm; storage capacity 1 Gbit; synchronous dynamic random access memories; total ionizing dose; Cyclotrons; Electronics packaging; Ion beams; Manufacturing; NASA; Nondestructive testing; Protons; SDRAM; Space technology; System testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2008 IEEE
  • Conference_Location
    Tucson, AZ
  • Print_ISBN
    978-1-4244-2545-7
  • Type

    conf

  • DOI
    10.1109/REDW.2008.14
  • Filename
    4638612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3021871