• DocumentCode
    3021998
  • Title

    Single Event Gate Rupture Testing on 22A Gate Oxide Structures from a 90nm Commercial CMOS Process

  • Author

    Lawrence, Reed K.

  • Author_Institution
    BAE Syst., Manassas, VA
  • fYear
    2008
  • fDate
    14-18 July 2008
  • Firstpage
    76
  • Lastpage
    81
  • Abstract
    Single event gate rupture (SEGR) testing on existing 22A gate oxide structures from a commercial 90 nm electrical characterization drop-in test-site indicate that classical SEGR, as defined as catastrophic gate oxide breakdown, was not detected. Results in this work do show cumulative gate oxide degradation which increases in relation to heavy ion LET exposure.
  • Keywords
    CMOS integrated circuits; integrated circuit testing; radiation hardening (electronics); 22A gate oxide structure; CMOS process; catastrophic gate oxide breakdown; drop-in test-site; single event gate rupture testing; size 90 nm; CMOS process; CMOS technology; Circuit testing; Leak detection; Leakage current; Manufacturing; Materials testing; Semiconductor device testing; Space technology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2008 IEEE
  • Conference_Location
    Tucson, AZ
  • Print_ISBN
    978-1-4244-2545-7
  • Type

    conf

  • DOI
    10.1109/REDW.2008.20
  • Filename
    4638618
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3021998