DocumentCode
3023404
Title
Low actuation voltage through three electrodes topology for RF MEMS capacitive switch
Author
Ramli, Nordin ; Sidek, Othman ; Amir, Mohammad
Author_Institution
British Malaysian Inst., Univ. Kuala Lumpur, Kuala Lumpur, Malaysia
fYear
2012
fDate
19-21 Sept. 2012
Firstpage
90
Lastpage
93
Abstract
This paper presents the investigation results of low actuation voltage for RF MEMS capacitive switches using three electrodes topology. The main purpose of the investigation is to verify the reduction of actuation voltage as a result of applying three electrodes in RF MEMS. The new switch structure emphasizes three parallel electrodes instead of two electrodes as in previous structure. In the design stage all performance factors include beam width, beam length, area and beam thickness have been optimized to ensure the best physical dimension of the switch. The investigation of the performance was carried out using Architect Coventorware. Preliminary results shows that the actuation voltage of the three parallel electrodes switch gives very significant reduction of actuation voltage which is approximately half compared to other topologies or standard structure using two parallel electrodes.
Keywords
electrodes; microswitches; microwave switches; Architect Coventorware; RF MEMS capacitive switch; beam length; beam thickness; beam width; electrodes topology; low actuation voltage; parallel electrode; Electrodes; Micromechanical devices; Microswitches; Radio frequency; Springs; Topology; Actuation Voltage; Capacitive Switch; Coplanar Waveguide; Electrostatic; RF MEMS;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4673-2395-6
Electronic_ISBN
978-1-4673-2394-9
Type
conf
DOI
10.1109/SMElec.2012.6417098
Filename
6417098
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