• DocumentCode
    3023404
  • Title

    Low actuation voltage through three electrodes topology for RF MEMS capacitive switch

  • Author

    Ramli, Nordin ; Sidek, Othman ; Amir, Mohammad

  • Author_Institution
    British Malaysian Inst., Univ. Kuala Lumpur, Kuala Lumpur, Malaysia
  • fYear
    2012
  • fDate
    19-21 Sept. 2012
  • Firstpage
    90
  • Lastpage
    93
  • Abstract
    This paper presents the investigation results of low actuation voltage for RF MEMS capacitive switches using three electrodes topology. The main purpose of the investigation is to verify the reduction of actuation voltage as a result of applying three electrodes in RF MEMS. The new switch structure emphasizes three parallel electrodes instead of two electrodes as in previous structure. In the design stage all performance factors include beam width, beam length, area and beam thickness have been optimized to ensure the best physical dimension of the switch. The investigation of the performance was carried out using Architect Coventorware. Preliminary results shows that the actuation voltage of the three parallel electrodes switch gives very significant reduction of actuation voltage which is approximately half compared to other topologies or standard structure using two parallel electrodes.
  • Keywords
    electrodes; microswitches; microwave switches; Architect Coventorware; RF MEMS capacitive switch; beam length; beam thickness; beam width; electrodes topology; low actuation voltage; parallel electrode; Electrodes; Micromechanical devices; Microswitches; Radio frequency; Springs; Topology; Actuation Voltage; Capacitive Switch; Coplanar Waveguide; Electrostatic; RF MEMS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-2395-6
  • Electronic_ISBN
    978-1-4673-2394-9
  • Type

    conf

  • DOI
    10.1109/SMElec.2012.6417098
  • Filename
    6417098