Title :
The effects of radiation and annealing on amorphous silicon solar cell space arrays
Author :
Vendura, G.J., Jr. ; Kruer, M.A. ; Kurland, R.M. ; Newton, J.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
This study centers on an ongoing effort to develop large area amorphous silicon (α-Si) solar cells for space applications. Such units are routinely commercially mass produced for terrestrial use. Of major importance, however, is their behavior in radiation environments. Compared to conventional crystalline cells, α-Si devices have the advantages of being very low cost, large area (⩾12×13 in.), extremely thin (2 μ), of minimal weight, flexible and monolithically interconnectable. Although these cells have considerable lower AM0 beginning of life (BOL) efficiencies compared to crystalline silicon and gallium arsenide on germanium (GaAs/Ge) space cells approximately 10% versus 13.5% and 18.2% respectively-the key consideration centers upon end of life (EOL) power which, in turn, is dependent upon a mission having a specific radiation environment
Keywords :
amorphous semiconductors; annealing; elemental semiconductors; radiation effects; silicon; solar cells; α-Si solar cells; 10 percent; 2 mum; AM0 beginning of life efficiencies; Si; amorphous silicon solar cell; annealing; end of life efficiencies; flexible solar cells; large area; low cost; minimal weight; monolithically interconnectable solar cells; radiation effects; space solar arrays; Amorphous silicon; Annealing; Crystallization; Degradation; Gallium arsenide; Photonic crystals; Photovoltaic cells; Protons; Solar power generation; Space missions;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520773
