Title :
Carrier trapping due to Fe3+/Fe2+ in InP
Author :
Söderstrom, D. ; Marcinkevicius, S. ; Karlsson, S. ; Lourdudoss, S.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
Abstract :
Time-resolved photoluminescence studies were performed on epitaxially grown InP either doped with iron or codoped with iron and sulphur to gain information on carrier trapping characteristics of Fe 3+/Fe2+. The carrier trapping time was found to be dependent on iron concentration in InP:Fe and both, iron and sulphur concentrations in InP:Fe,S. From the measured trapping times in both InP:Fe and InP:Fe,S the electron and hole capture cross sections of the Fe deep levels are determined as σe=1×10-15 cm2 and σh=6×10-15 cm2 respectively. From the derived capture cross sections and the measured trapping times, the concentration of the different iron species is calculated in both, InP:Fe and InP:Fe,S. It reveals that the active iron concentration (Fe3+) exceeds 1×1018 cm-3 for the highest total iron doping concentrations in InP:Fe
Keywords :
III-V semiconductors; deep levels; electron traps; hole traps; impurity states; indium compounds; iron; photoluminescence; semiconductor epitaxial layers; time resolved spectra; InP:Fe; InP:Fe,S; carrier trapping; deep level; doping concentration; electron capture cross section; epitaxial layer; hole capture cross section; time-resolved photoluminescence; Charge carrier processes; Electron traps; Epitaxial growth; Indium phosphide; Iron; Laser excitation; Mass spectroscopy; Pulse measurements; Substrates; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600181
