Title :
Characterization of NBTI by evaluation of hydrogen amount in the Si/SiO2 interface
Author :
Amethystna, S.K. ; Nidhi, Karuna ; Shao-Ming Yang ; Sheu, G. ; Jung-Ruey Tsai ; Siddiqui, M.I.
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
Abstract :
In this work, the behavior of Si-H bond generating interface trap was studied by experiment and TCAD simulation. Its behavior is responsible for the increasing of PMOSFET absolute threshold voltage due to negative bias temperature instability (NBTI) stress for device reliability issue. It was found that the temperature stress has more significant influence on initial interface trap generation as compare to the electric field stress. In addition, fast triangular pulse measurement with elevated temperature was applied to eliminate the NBTI recovery effect and gives a better evaluation of the number of generated interface trap, as compared to the conventional DCIV measurement under NBTI stress.
Keywords :
MOSFET; electronic engineering computing; hydrogen; pulse measurement; semiconductor device reliability; silicon compounds; technology CAD (electronics); DCIV measurement; NBTI recovery effect elimination; PMOSFET absolute threshold voltage; Si-H; Si-SiO2; TCAD simulation; device reliability issue; direct current current-voltage measurement; electric field stress; elevated temperature; fast triangular pulse measurement; interface trap generation; negative bias temperature instability stress; p-type metal-oxide-semiconductor devices; Degradation; Electric fields; Hydrogen; Silicon; Stress; Temperature measurement; Threshold voltage; Fast Triangular Pulse; Interface Trap Distribution; NBTI; Recovery Effect; TCAD Simulation;
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
DOI :
10.1109/SMElec.2012.6417239