DocumentCode
30268
Title
Mechanism of High Temperature Retention Property (up to 200 °C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer
Author
Chand, Umesh ; Chun-Yang Huang ; Tseung-Yuen Tseng
Author_Institution
Dept. of Electron. EngineeringInstitute of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
35
Issue
10
fYear
2014
fDate
Oct. 2014
Firstpage
1019
Lastpage
1021
Abstract
In this letter, the switching mechanism of the ZrO2-based RRAM devices with the uniform and reliable reliability properties is investigated. The stability of memory window can be improved by inserting a ZnO thin film with the nonstoichiometric property between Ti top electrode and ZrO2 layer. Compared with ZrO2 film, the ZnO one can easily perform the oxidation-reduction reaction for stable endurance properties. In addition, through Gibbs free energy comparison of TiOx, ZrO2, and ZnO, we can demonstrate that the Gibbs free energy contributes to the retention performance. The device with thin ZnO layer has stable retention performance at high temperature (200 °C) due to its higher Gibbs free energy value than TiOx.
Keywords
free energy; integrated circuit reliability; random-access storage; semiconductor thin films; zinc compounds; zirconium compounds; Gibbs free energy comparison; RRAM devices; ZnO; ZrO2; endurance properties; high-temperature retention property mechanism; memory window stability; nonstoichiometric property; oxidation-reduction reaction; reliability properties; retention performance; switching mechanism; titanium top electrode; zinc oxide thin film; zinc oxide thin layer; zirconium dioxide-based memory device; Ions; Performance evaluation; Reliability; Resistance; Switches; Temperature; Zinc oxide; Gibbs free energy; RRAM; ZnO; ZrO₂; ZrO2; double layer; resistive switching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2345782
Filename
6879276
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