• DocumentCode
    3027007
  • Title

    Nanoindentation creep analysis of gold ball bond

  • Author

    Zulkifli, M.N. ; Jalar, A. ; Abdullah, Saad ; Othman, Norinsan Kamil ; Hamid, Muhammad Azmi Abd

  • Author_Institution
    Inst. of Microeng. & Nanoelectronic (IMEN), Univ. Kebangsaan Malaysia, Bangi, Malaysia
  • fYear
    2012
  • fDate
    19-21 Sept. 2012
  • Firstpage
    755
  • Lastpage
    758
  • Abstract
    The analysis of indentation creep of gold, Au ball bond was carried out by using nanoindentation approach. 3 × 4 arrays of indentation were indented at three location of Au ball bond namely gold, Au Zone, intermetallic compounds, IMC Zone and Silicon, Si Zone. It was observed that Au and IMC have higher creep behavior compared to that of Si. The responsible indentation creep mechanism for Au and IMC of ball bond that have been subjected 1000 hours of HTS was the dislocation glide. It was noted that the lower plastic deformation or creep effect of IMC was due to the higher hardness value which demonstrated the strain hardening effect compared to that of Au.
  • Keywords
    creep; elemental semiconductors; gold; nanoindentation; plastic deformation; silicon; slip; work hardening; Au; Au zone; IMC zone; Si; dislocation glide; gold ball bond; high temperature storage; intermetallic compounds; nanoindentation creep analysis; plastic deformation; silicon zone; strain hardening; time 1000 hour; Creep; Gold; High temperature superconductors; Sensitivity; Strain; Stress; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-2395-6
  • Electronic_ISBN
    978-1-4673-2394-9
  • Type

    conf

  • DOI
    10.1109/SMElec.2012.6417253
  • Filename
    6417253