DocumentCode
3027007
Title
Nanoindentation creep analysis of gold ball bond
Author
Zulkifli, M.N. ; Jalar, A. ; Abdullah, Saad ; Othman, Norinsan Kamil ; Hamid, Muhammad Azmi Abd
Author_Institution
Inst. of Microeng. & Nanoelectronic (IMEN), Univ. Kebangsaan Malaysia, Bangi, Malaysia
fYear
2012
fDate
19-21 Sept. 2012
Firstpage
755
Lastpage
758
Abstract
The analysis of indentation creep of gold, Au ball bond was carried out by using nanoindentation approach. 3 × 4 arrays of indentation were indented at three location of Au ball bond namely gold, Au Zone, intermetallic compounds, IMC Zone and Silicon, Si Zone. It was observed that Au and IMC have higher creep behavior compared to that of Si. The responsible indentation creep mechanism for Au and IMC of ball bond that have been subjected 1000 hours of HTS was the dislocation glide. It was noted that the lower plastic deformation or creep effect of IMC was due to the higher hardness value which demonstrated the strain hardening effect compared to that of Au.
Keywords
creep; elemental semiconductors; gold; nanoindentation; plastic deformation; silicon; slip; work hardening; Au; Au zone; IMC zone; Si; dislocation glide; gold ball bond; high temperature storage; intermetallic compounds; nanoindentation creep analysis; plastic deformation; silicon zone; strain hardening; time 1000 hour; Creep; Gold; High temperature superconductors; Sensitivity; Strain; Stress; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4673-2395-6
Electronic_ISBN
978-1-4673-2394-9
Type
conf
DOI
10.1109/SMElec.2012.6417253
Filename
6417253
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