MBE grown dislocation-free antimonides on GaAs compliant universal substrates

In this work, we demonstrate the growth of a 6500 Å, dislocation-free, InSb layer (~14.7% compressively lattice mismatched to GaAs) on a compliant universal (CU) GaAs substrate. Using a recently proposed technology, twist wafer-bonding, the authors use a new type of III-V substrate on which almost any type of semiconductor may be grown without dislocations. The CU GaAs substrate was formed by wafer-bonding a 30 Å GaAs layer to a bulk GaAs crystal with a large angular misalignment inserted about their common (100) direction. Cross-sectional bright-field TEM images of the InSb show no dislocations in all of the observed areas (~2.6 μm wide in one contiguous region). Electron diffraction measurements made of the films showed the twist wafer-bonding technology to be promising for even higher lattice-mismatches