Title :
Quasi three-dimensional simulation for thin film polycrystalline silicon solar cells
Author :
Ishikawa, Y. ; Yamamoto, Y. ; Hatayama, T. ; Uraoka, Y. ; Fuyuki, T.
Author_Institution :
Graduate Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan
Abstract :
Optimum designs of cell configuration and polycrystalline silicon (poly-Si) grown by atmospheric pressure chemical vapor deposition (APCVD) have been demonstrated. In order to realize high-efficiency thin film poly-Si solar cells, a novel method of quasi three-dimensional simulation using a cylindrical coordinate system was carried out. Grain boundaries interface recombination velocity based on the simulation should be less than 103 cm/s. Even at a relatively short diffusion length of Ln=50 μm, high efficiency larger than 16% will be expected at a thickness of 5-20 μm. Poly-Si films with columnar diameter of around 5 μm were successfully deposited on foreign substrates with APCVD at a high growth rate of 0.8 μm/min
Keywords :
chemical vapour deposition; elemental semiconductors; grain boundaries; semiconductor device models; semiconductor growth; silicon; solar cells; surface recombination; 5 to 20 mum; APCVD; Si; atmospheric pressure chemical vapor deposition; cell configuration; cylindrical coordinate system; foreign substrates; grain boundaries interface recombination velocity; growth rate; high-efficiency; optimum designs; poly-Si; poly-Si films; quasi three-dimensional simulation; thin film polycrystalline silicon solar cells; Atmospheric modeling; Chemical technology; Grain boundaries; Grain size; Materials science and technology; Photovoltaic cells; Semiconductor thin films; Silicon; Sputtering; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915813
