DocumentCode :
3027972
Title :
Monolithic Integration Of InAlGaAs/InGaAs FEts With MQW Modulators Operating At 1.06 μm On GaAs Substrates
Author :
Shih, D.W. ; Fan, C. ; Hansen, M.W. ; Wieder, H.H. ; Esener, S.C.
Author_Institution :
University of California
fYear :
1994
fDate :
6-13 Jul 1994
Keywords :
Electrons; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Intensity modulation; MODFET circuits; Monolithic integrated circuits; Optical modulation; Quantum well devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN :
0-7803-1752-1
Type :
conf
DOI :
10.1109/LEOSST.1994.700424
Filename :
700424
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3027972
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