DocumentCode
3028201
Title
InP-based monolithically integrated photoreceivers
Author
Lunardi, L.M.
Author_Institution
AT&T Bell Labs.-Res., Holmdel, NJ, USA
fYear
1997
fDate
11-15 May 1997
Firstpage
471
Lastpage
474
Abstract
Photoreceivers, composed by a InGaAs photodetector monolithically integrated with either field-effect or bipolar transistor-based amplifiers, have achieved high-speed and high-sensitivities up to 20 Gb/s in single channel or aggregated throughput in multichannel configurations. A review of high performance InP-based technologies targeted to fiber optic communication applications is presented
Keywords
III-V semiconductors; indium compounds; integrated optoelectronics; optical receivers; 20 Gbit/s; InGaAs photodetector; InP; amplifier; bipolar transistor; fiber optic communication; field effect transistor; high-speed device; monolithically integrated photoreceiver; multichannel configuration; sensitivity; single channel configuration; Bandwidth; Bipolar transistors; Epitaxial growth; HEMTs; MODFETs; Molecular beam epitaxial growth; Optical amplifiers; Optical receivers; PIN photodiodes; Photodetectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location
Cape Cod, MA
ISSN
1092-8669
Print_ISBN
0-7803-3898-7
Type
conf
DOI
10.1109/ICIPRM.1997.600196
Filename
600196
Link To Document