Waveguide AlInAs/AlGaInAs avalanche photodiode for 20 Gbit/s photoreceivers

Author

Cohen-Jonathan, C. ; Giraudet, L. ; Praseuth, J.P. ; Legros, E. ; Heliot, Fabien ; Bonzo, A.

Author_Institution

CNET, Bagneux, France

fYear

1997

fDate

11-15 May 1997

Firstpage

486

Lastpage

489

Abstract

High speed photodetectors are needed in optical communication systems and avalanche photodiodes are essential in highly sensitive photoreceivers at the 1.55 μm wavelength. Avalanche photodiodes (APDs), when compared to PIN photodiodes, provide higher responsivities due to their internal gain M. An improvement in the signal to noise ratio of about 10 dB is expected at 20 Gbit/s. Very good performances have already been demonstrated at 10 Gbit/s. For higher bit-rates, a side-illuminated structure has been proposed, to reach simultaneously high responsivity and high speed. The simulations allowing to design waveguide APD structures, their fabrication and their characteristics are reported in this paper

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; high-speed optical techniques; indium compounds; optical receivers; optical waveguide components; photodetectors; 1.55 micron; 20 Gbit/s; AlInAs-AlGaInAs; design; fabrication; high speed photodetector; internal gain; optical communication system; photoreceiver; responsivity; side illumination; signal to noise ratio; simulation; waveguide avalanche photodiode; Absorption; Avalanche photodiodes; Bandwidth; Buffer layers; Frequency response; Indium gallium arsenide; Optical beams; Optical buffering; Optical refraction; Optical waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600201

Filename

600201