DocumentCode :
3029748
Title :
Suppression of current fluctuations in carbon nanotube field-effect transistors by applying alternating current
Author :
Ohno, Yasuhide ; Maehashi, Kenzo ; Inoue, Koichi ; Matsumoto, Kazuhiko
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Ibaraki
fYear :
2008
fDate :
25-29 Feb. 2008
Firstpage :
67
Lastpage :
70
Abstract :
A method of suppressing current fluctuations in carbon nanotube field-effect transistors (CNTFETs) is proposed. We compared the time dependences of the drain current for direct current (DC) measurement and alternating current (AC) measurement with a lock-in amplifier. Drain-current fluctuations were highly suppressed by the AC with lock-in method in the small gate voltage regime. On the other hand, the current fluctuations for DC measurements were not so suppressed even if the integration time was increased from 80 mus to 10 ms. The frequency dependence of the current noise power spectra of the DC measurements was approximately 1/f while that of the AC measurement was approximately 1/f2. These results indicate that the use of AC with a lock-in amplifier is very suitable for the suppression of current fluctuations.
Keywords :
1/f noise; carbon nanotubes; current fluctuations; field effect transistors; nanotube devices; semiconductor device noise; C; alternating current; carbon nanotube field-effect transistors; current noise power spectra; direct current; drain-current fluctuations; lock-in amplifier; lock-in method; Amplifiers; CNTFETs; Current measurement; Fluctuations; Frequency dependence; Frequency measurement; Noise measurement; Power measurement; Time measurement; Voltage; carbon nanotube; component; field-effect transistor; noise characteristics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscience and Nanotechnology, 2008. ICONN 2008. International Conference on
Conference_Location :
Melbourne, Vic.
Print_ISBN :
978-1-4244-1503-8
Electronic_ISBN :
978-1-4244-1504-5
Type :
conf
DOI :
10.1109/ICONN.2008.4639247
Filename :
4639247
Link To Document :
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