A Ka-band GaInP/GaAs HBT four-stage low noise amplifier

Author

Freundorfer, A.P. ; Jamani, Y.

Author_Institution

Dept. of Electr. & Comput. Eng., Queen´´s Univ., Kingston, Ont., Canada

Volume

1

fYear

1996

fDate

26-29 May 1996

Firstpage

146

Abstract

A Ka-band GaInP/GaAs HBT four-stage LNA has been designed and fabricated. This circuit is to be used in a multifunction transmit/receive (T/R) module for local multipoint distribution systems (LMDS) which include both analog and digital transmission. An average noise figure of 6 dB from 27 to 30 GHz, and a gain of greater than 15 dB were measured. These results are the best reported at Ka-band for a LNA using transistors from a digital HBT library

Keywords

III-V semiconductors; MMIC amplifiers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit noise; 15 dB; 27 to 30 GHz; 6 dB; GaInP-GaAs; HBT four-stage LNA; Ka-band; LMDS; SHF; local multipoint distribution systems; low noise amplifier; multifunction T/R module; transmit/receive module; Circuit noise; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit noise; Low-noise amplifiers; Microwave transistors; Noise figure; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 1996. Canadian Conference on

Conference_Location

Calgary, Alta.

ISSN

0840-7789

Print_ISBN

0-7803-3143-5

Type

conf

DOI

10.1109/CCECE.1996.548058

Filename

548058