DocumentCode :
3031015
Title :
Vibration Sensor with Floating Gate Based on Standard CMOS Process
Author :
Ting Yu ; Benxian Peng ; Fengqi Yu
Author_Institution :
Dept. of Integrated Electron., Shenzhen Inst. of Adv. Technol., Shenzhen, China
fYear :
2013
fDate :
29-30 June 2013
Firstpage :
1643
Lastpage :
1646
Abstract :
A vibration sensor with floating gate based on standard CMOS and post-CMOS processes is presented. The vibrating membrane is released with one simple metal sacrificial layer removal step, which is very cost-efficient and fully CMOS compatible, enabling monolithic integration of circuitry. Test results show that the proposed sensor can work properly, and have good frequency linearity with the test shaking system, which exhibits prefect linearity up to 99.94%.
Keywords :
CMOS integrated circuits; MOSFET; microsensors; vibration measurement; floating gate; metal sacrificial layer; monolithic circuit integration; postCMOS process; standard CMOS process; vibration membrane; vibration sensor; Automation; Manufacturing; CMOS; floating gate; vibration sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Digital Manufacturing and Automation (ICDMA), 2013 Fourth International Conference on
Conference_Location :
Qingdao
Type :
conf
DOI :
10.1109/ICDMA.2013.394
Filename :
6598318
Link To Document :
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