Title :
Mechanical properties of hydrogenated amorphous silicon carbide thin films
Author :
Matsuda, Yusuke ; King, Sean W. ; Bielefeld, Jeff ; Dauskardt, Reinhold H.
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., Stanford, CA, USA
Abstract :
The reliable fabrication of interconnects containing ultra low-k organosilicate dielectrics (ULK) has been a significant technological challenge. ULK´s are inherently fragile with reduced elastic constants. In addition, their Si-O backbone makes organosilicate films prone to moisture-assisted cracking leading to serious reliability concerns. In this study, we investigated the mechanical properties of hydrogenated amorphous silicon carbide films (a-SiC:H) that do not contain Si-O bonds. The mechanical properties of a-SiC:H films are considered together with their enhanced fracture resistance and remarkable insensitivity to moisture assisted cracking.
Keywords :
cracks; fracture; hydrogen; semiconductor thin films; silicon compounds; wide band gap semiconductors; SiC:H; a-SiC:H; elastic constants; enhanced fracture resistance; hydrogenated amorphous silicon carbide thin films; mechanical properties; moisture-assisted cracking; ultra low-k organosilicate dielectrics; Amorphous silicon; Dielectric constant; Dielectric thin films; Etching; Material properties; Mechanical factors; Moisture; Semiconductor films; Semiconductor thin films; Spine;
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
DOI :
10.1109/IITC.2010.5510305
