Title :
InGaP/GaAs/Ge multi-junction solar cell efficiency improvements using epitaxial germanium
Author :
Aiken, Daniel J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Triple junction InGaP/GaAs/Ge solar cells are highly current mismatched due to the excess current generating capability of the germanium subcell. This severe current mismatch invites new approaches for increasing performance beyond that of current triple junctions. Presented here are two approaches for improving the efficiency of Ill-V multi-junctions beyond that of current triple junction technology. Both of these approaches involve the use of thin epitaxial germanium and do not require the development of new ~1 eV photovoltaic materials. The theoretical AM0 efficiency is over 30%. Modeling suggests the potential for over 1.5% absolute efficiency gain with respect to current InGaP/GaAs/Ge triple junction solar cells
Keywords :
III-V semiconductors; MOCVD coatings; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; p-n heterojunctions; semiconductor epitaxial layers; solar cells; Ill-V multi-junctions; InGaP-GaAs-Ge; InGaP/GaAs/Ge multi-junction solar cell; current generating capability; current mismatch; efficiency improvements; epitaxial germanium; germanium subcell; photovoltaic materials; theoretical AM0 efficiency; triple junction InGaP/GaAs/Ge solar cells; Gallium arsenide; Germanium; Integrated circuit interconnections; Laboratories; Lattices; MOCVD; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916053
