DocumentCode :
3031363
Title :
Minimization of plasma ashing damage to OSG low-k dielectrics
Author :
Shi, H. ; Huang, H. ; Im, J. ; Ho, P.S. ; Zhou, Y. ; Pender, J.T. ; Armacost, M. ; Kyser, D.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
fYear :
2010
fDate :
6-9 June 2010
Firstpage :
1
Lastpage :
3
Abstract :
This paper investigated the plasma ashing damage to patterned porous low k structures with the objective to minimize the plasma damage by optimizing the low-k structural geometry and plasma chemistry. We first extended the plasma altered layer model to formulate the transport kinetics of the plasma process in patterned low-k structures. This enabled us to analyze the effects of the hardmask thickness, trench width and trench length on the plasma interaction with the trench sidewall. Then CO/O2 and CO2/N2 plasmas were used to replace O2 plasma for ashing process to examine their potential for reducing plasma ashing damage to porous low k patterned structures. With increasing CO in CO/O2 plasma, the extent of plasma induced damages was found to decrease. Similarly, with increasing N2 in CO2/N2 plasma, the plasma induced damages were also found to decrease. On the basis of the Knudsen diffusivity difference among C, N, and O, the reduction of plasma induced damage was ascribed to the formation of C- and N- rich passivation layer on the sidewall and pore surface of the patterned low-k structure.
Keywords :
integrated circuit interconnections; low-k dielectric thin films; passivation; porous materials; sputter etching; Knudsen diffusivity difference; OSG low-k dielectrics; hardmask thickness; low-k structural geometry; minimization; passivation layer; patterned low-k structures; patterned porous low k structures; plasma altered layer model; plasma ashing damage; plasma chemistry; plasma induced damages; plasma interaction; plasma process; pore surface; transport kinetics; trench length; trench sidewall; trench width; Dielectrics; Kinetic theory; Plasma applications; Plasma chemistry; Plasma density; Plasma materials processing; Plasma simulation; Plasma sources; Plasma transport processes; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
Type :
conf
DOI :
10.1109/IITC.2010.5510308
Filename :
5510308
Link To Document :
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