Improved smart power discrete devices fabricated using SIMOX technology

Author

Sridhar, S. ; Baliga, B.J.

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

Volume

1

fYear

1996

fDate

23-27 Jun 1996

Firstpage

608

Abstract

A smart power technology combining discrete high voltage devices (IGBT, BRT, SIMBRT) with SIMOX (selective implantation with oxygen) isolated NMOS, PMOS, NPN and PNP transistors is reported in this paper. A new MOS-gated thyristor (SIMBRT) structure, with enhanced RBSOA created by addition of a SIMOX layer to the BRT cell, is described for the first time. Experimental results at room and elevated temperatures are presented. The effects of lifetime control on the operation of the power device and substrate bias on the operation of low voltage control elements are also presented

Keywords

MOS-controlled thyristors; SIMOX; carrier lifetime; insulated gate bipolar transistors; power MOSFET; semiconductor device manufacture; voltage control; BRT; IGBT; MOS-gated thyristor; NMOS; NPN transistors; PMOS; PNP transistors; SIMBRT; SIMOX technology; enhanced RBSOA; high voltage devices; lifetime control; low voltage control elements; selective implantation with oxygen; smart power discrete devices; substrate bias; Circuits; Current density; Electrons; Insulated gate bipolar transistors; Isolation technology; Logic devices; Low voltage; Substrates; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE

Conference_Location

Baveno

ISSN

0275-9306

Print_ISBN

0-7803-3500-7

Type

conf

DOI

10.1109/PESC.1996.548643

Filename

548643