Identification of radiation induced dark current sources in Pinned PhotoDiode CMOS Image Sensors

Author

Goiffon, V. ; Virmontois, C. ; Magnan, P. ; Cervantes, P. ; Gaillardin, M. ; Girard, S. ; Paillet, P. ; Martin-Gonthier, P.

Author_Institution

ISAE, Univ. de Toulouse, Toulouse, France

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

321

Lastpage

328

Abstract

This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral STI does not seem to play a role in the degradation. The PPD area and an additional contribution independent on the pixel dimensions appear to be the main sources of the TID induced dark current increase.

Keywords

CMOS image sensors; constant current sources; photodiodes; radiation hardening (electronics); PPD peripheral STI; TID induced dark current; device degradation; layout parameters; pinned photodiode CMOS image sensor; pixel design variations; pixel dimensions; pixel layout; radiation induced dark current source identification; total ionizing dose induced dark current source identification; Current measurement; Dark current; Ionizing radiation; Layout; Logic gates; Photodiodes; Radiation effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131311

Filename

6131311