Title :
New methods for measuring performance of monolithic multi-junction solar cells
Author :
King, D.L. ; Hansen, B.R. ; Moore, J.M. ; Aiken, D.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
The commercialization of multi-junction solar cells for both space and terrestrial applications has increased the need to accurately determine cell performance using typical solar simulators and test equipment. This paper describes specific test methods recently applied in characterizing the performance of both tandem and triple-junction solar cells. Methods applied included: current-voltage measurements in forward and reverse bias using a xenon-arc solar simulator; absolute spectral response measurements of separate junctions using both light and voltage bias; a device simulation model; and a spectral mismatch calculation procedure tailored to multi-junction cells. Procedures are illustrated using measurements for GaInP-GaAs tandem cells, GaInP-GaAs-Ge triple-junction cells, and Ge cells supplied by different manufacturers
Keywords :
III-V semiconductors; electric current measurement; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; p-n heterojunctions; semiconductor device measurement; semiconductor device models; semiconductor device testing; solar cells; voltage measurement; GaInP-GaAs; GaInP-GaAs-Ge; Ge; absolute spectral response measurements; current-voltage measurements; device simulation model; forward and reverse bias; monolithic multi-junction solar cells; performance measurement methods; reverse bias; spectral mismatch calculation procedure; test equipment; xenon-arc solar simulator; Circuit simulation; Commercialization; Gallium arsenide; Laboratories; Manufacturing; Measurement standards; Photovoltaic cells; Shape; Testing; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916103