Monte Carlo Comparison Between InAlAs/InGaAS Double-Gate and Standard HEMTs

Author

Vasallo, B.G. ; González, T. ; Pardo, D. ; Mateos, J. ; Wichmann, N. ; Bollaert, S. ; Cappy, A.

Author_Institution

Univ. de Salamanca, Salamanca

fYear

2007

fDate

Jan. 31 2007-Feb. 2 2007

Firstpage

80

Lastpage

83

Abstract

An ensemble 2D Monte Carlo simulator is employed to analyze the static and dynamic performance of InAlAs/ InGaAs double-gate high electron mobility transistors (DG-HEMTs) by comparing them with standard single-gate (SG) ones. Different gate length devices are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The transconductance g_m and the output conductance g_d are confirmed to be improved by the DG-geometry. As well, the higher values of the figure of merit g_m / g_d jointly with the lower value of the gate resistance R_g lead to an improvement of the extrinsic frequency performance (f_max and f_t).

Keywords

Monte Carlo methods; high electron mobility transistors; InAlAs-InGaAs; double-gate high electron mobility transistor; ensemble 2D Monte Carlo simulator; short-channel effect; Analytical models; Attenuation; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Monte Carlo methods; Performance analysis; Transconductance; Double-Gate HEMT; Monte Carlo simulation; dynamic behaviour;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2007 Spanish Conference on

Conference_Location

Madrid

Print_ISBN

1-4244-0868-7

Type

conf

DOI

10.1109/SCED.2007.383958

Filename

4271173