Title :
Experimental analysis of SEL sensitiveness on Atmel MG2RT technology
Author :
Sterpone, L. ; Mancini, R. ; Gelfusa, D.
Author_Institution :
Dipt. di Autom. e Inf., Politec. di Torino, Torino, Italy
Abstract :
Single Event Latchup (SEL) in Gate Arrays MG2 Radiation Hardened Atmel technology is examined with respect to strike of heavy ions. Radiation tests, performed at GANIL radiation facility, have been executed at high temperature by monitoring current absorption and analyzing the functionalities of the MSDRX ASIC implemented using MG2RT technology part of a TAS-I transponder core. A drastic improvement of the device SEL sensitivity is observed for high power supply voltages. In this paper, we describe the performed experiments, the experimental setup and we provide an accurate investigation of the obtained results.
Keywords :
application specific integrated circuits; radiation hardening (electronics); Atmel MG2RT technology; GANIL radiation facility; MSDRX ASIC; SEL sensitiveness; TAS-I transponder core; current absorption monitoring; gate array MG2 radiation hardened Atmel technology; heavy-ions; radiation tests; single-event latchup; Clocks; Monitoring; Noise; Performance evaluation; Power supplies; Temperature measurement; Temperature sensors; Radiation effects; Single Event Latchup; heavy ion; high temperature test;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131341
