Title :
Phosphine-added hydrogen plasma passivation of GaAs solar cell on Si substrate
Author :
Ogawa, T. ; Wang, G. ; Murase, K. ; Hori, K. ; Arokiaraj, J. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Nagoya Inst. of Technol., Japan
Abstract :
The improvement of the GaAs solar cell on Si substrate (GaAs/Si solar cell) has been studied by treating phosphine-added hydrogen plasma (PH3/H2 plasma) exposure. Phosphidization of GaAs surface and defect-passivation of entire GaAs bulk layer are realized simultaneously. As a result, surface recombination states are reduced, and the minority carrier lifetime is increased. Furthermore, the reduction of interface (GaAs/AlGaAs) recombination velocity is confirmed. For PH3/H2 plasma exposed GaAs/Si solar cell, high open-circuit voltage and fill factor are obtained. Consequently, the conversion efficiency is increased from 15.9% to 18.6%
Keywords :
III-V semiconductors; carrier lifetime; elemental semiconductors; gallium arsenide; hydrogen; passivation; phosphorus compounds; plasma materials processing; silicon; solar cells; substrates; surface recombination; 18.6 percent; GaAs bulk layer; GaAs solar cell; GaAs surface; GaAs-AlGaAs; GaAs-Si; GaAs/Si solar cell; PH3-H2; PH3/H2 plasma exposure; Si; Si substrate; conversion efficiency; defect-passivation; high fill factor; high open-circuit voltage; interface recombination velocity reduction; minority carrier lifetime; phosphidization; phosphine-added hydrogen plasma passivation; surface recombination states; Gallium arsenide; Hydrogen; Passivation; Photovoltaic cells; Plasma density; Plasma sources; Plasma waves; Substrates; Surface treatment; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916131
