Title :
ARXPS characterization of InGaP/GaAs heterointerface grown by MOVPE
Author :
López, M.C. ; Galiana, B. ; Algora, C. ; Rey-Stolle, I. ; Garcia, I. ; Gabas, M. ; Ramos-Barrado, J.R.
Author_Institution :
Univ. de Malaga, Malaga
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
This paper studies the chemical composition of the hetereointerface of the semiconductors InGaP/GaAs, grown by metal organic vapor phase epitaxy (MOVPE), by means of X-ray Photoelectrons Spectroscopy (XPS) by two methods: conventional XPS with Ar+ sputtering and by angle resolved XPS (ARXPS). Firstly, from the corrected Auger parameter for different angles, we have determined the depth of the Ga oxide in the superficial GaAs layer by environmental contamination and we have studied its influence in the interface. The thickness of Ga2O3 is only of some Armstrong and it no presents an important influence in the interface.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; vapour phase epitaxial growth; Armstrong; InGaP-GaAs; MOVPE; angle resolved X-ray photoelectrons spectroscopy; auger parameter; chemical composition; metal organic vapor phase epitaxy; Epitaxial growth; Epitaxial layers; Gallium arsenide; Organic chemicals; Oxidation; Photovoltaic cells; Photovoltaic systems; Solar power generation; Spectroscopy; Sputtering; Chemical analysis; Gallium compounds; Interface phenomena; XPS;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.384019
