DocumentCode :
3033027
Title :
Underground characterization and modeling of alpha-particle induced Soft-Error Rate in CMOS 65nm SRAM
Author :
Martinie, S. ; Autran, J.L. ; Sauze, S. ; Munteanu, D. ; Uznanski, S. ; Roche, P. ; Gasiot, G.
Author_Institution :
Inst. of Mater., Microelectron. & Nanosci. of Provence, Aix-Marseille Univ., Marseille, France
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
524
Lastpage :
527
Abstract :
This work reports a long-duration (~ 3 years) real-time underground experiment of 65 nm SRAM technology at the underground laboratory of Modane (LSM) to quantify the impact of alpha-emitter on Soft Error Rate. We developed an original and full analytical charge deposition based on non constant Linear Energy Transfer (LET) to accurately model the diffusion/collection approach. Monte-Carlo simulation results based on this new model have been confronted to experimental data to analyze the alpha-particles impact on Multiple Ship Upset.
Keywords :
CMOS memory circuits; Monte Carlo methods; SRAM chips; radiation hardening (electronics); CMOS technology; LET; Monte-Carlo simulation; SRAM technology; alpha-emitter; alpha-particle induced soft-error rate; diffusion-collection approach; linear energy transfer; long-duration real-time underground experiment; size 65 nm; Contamination; Monte Carlo methods; Random access memory; Real time systems; Silicon; Single event upset; Alpha emitter; Single-Event Rate (SER); contamination; real-time testing; secular equilibrium; static memory; uranium; uranium disintegration chain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131359
Filename :
6131359
Link To Document :
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