Title :
MOCVD growth of heavily p-type doped InGaAs using bismethylcyclopentadienyl-beryllium
Author :
Suzuki, D. ; Kimura, T. ; Takiguchi, T. ; Takemi, M. ; Fujii, S. ; Mihashi, Y. ; Higuchi, H.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Beryllium (Be) has been investigated as p-type dopant for InGaAs layers grown using bismethylcyclopentadienyl-beryllium ((MeCp)2 Be) by low-pressure metalorganic chemical vapor deposition. It is found that hole concentration is in proportion to the (MeCp)2Be flow rate, which results in excellent doping controllability. Moreover, the doping efficiency of (MeCp)2Be is one order of magnitude higher than that of diethylzinc (DEZn). InGaAs increases with increasing growth temperature in the temperature range from 570 to 625°C. Heavily Be-doped InGaAs layers with specular surface morphology have been attained with a hole concentration in excess of 1019 cm-3 by optimization of growth condition. (MeCp)2Be is promising precursor as p-type dopant source for optoelectronic devices
Keywords :
III-V semiconductors; beryllium; chemical vapour deposition; heavily doped semiconductors; hole density; indium compounds; semiconductor doping; semiconductor growth; semiconductor thin films; 570 to 625 C; InGaAs:Be; MOCVD growth; bismethylcyclopentadienyl-beryllium precursor; heavily p-type doped InGaAs; hole concentration; low-pressure metalorganic chemical vapor deposition; optoelectronic device; specular surface morphology; Chemical vapor deposition; Controllability; Doping; Indium gallium arsenide; Indium phosphide; MOCVD; Microwave devices; Surface morphology; Temperature distribution; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600223
