MOCVD growth of heavily p-type doped InGaAs using bismethylcyclopentadienyl-beryllium

Author

Suzuki, D. ; Kimura, T. ; Takiguchi, T. ; Takemi, M. ; Fujii, S. ; Mihashi, Y. ; Higuchi, H.

Author_Institution

Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

540

Lastpage

543

Abstract

Beryllium (Be) has been investigated as p-type dopant for InGaAs layers grown using bismethylcyclopentadienyl-beryllium ((MeCp)₂Be) by low-pressure metalorganic chemical vapor deposition. It is found that hole concentration is in proportion to the (MeCp)₂Be flow rate, which results in excellent doping controllability. Moreover, the doping efficiency of (MeCp)₂Be is one order of magnitude higher than that of diethylzinc (DEZn). InGaAs increases with increasing growth temperature in the temperature range from 570 to 625°C. Heavily Be-doped InGaAs layers with specular surface morphology have been attained with a hole concentration in excess of 10¹⁹ cm^-3 by optimization of growth condition. (MeCp)₂Be is promising precursor as p-type dopant source for optoelectronic devices

Keywords

III-V semiconductors; beryllium; chemical vapour deposition; heavily doped semiconductors; hole density; indium compounds; semiconductor doping; semiconductor growth; semiconductor thin films; 570 to 625 C; InGaAs:Be; MOCVD growth; bismethylcyclopentadienyl-beryllium precursor; heavily p-type doped InGaAs; hole concentration; low-pressure metalorganic chemical vapor deposition; optoelectronic device; specular surface morphology; Chemical vapor deposition; Controllability; Doping; Indium gallium arsenide; Indium phosphide; MOCVD; Microwave devices; Surface morphology; Temperature distribution; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600223

Filename

600223