• DocumentCode
    3033263
  • Title

    Role of Doping and Thickness of Emitter in the Efficiency of Monocrystalline Si Solar Cells

  • Author

    Vazquez, Carlos ; Alonso, J. ; Vazquez, Miguel Angel ; Caballero, L.J. ; Martinez, A. ; Romero, R. ; Ramos-Barrado, J.R.

  • Author_Institution
    Univ. de Malaga, Malaga
  • fYear
    2007
  • fDate
    Jan. 31 2007-Feb. 2 2007
  • Firstpage
    254
  • Lastpage
    257
  • Abstract
    In order to improve the efficiency of Czocharalski - Si (Cz-Si) photovoltaic cells, we have studied the distribution losses from recombination in Cz-Si commercial standard cell (Isofoton S.A.) by means of I-V measurements under solar simulation illumination with a surface irradiance of 1000 W/m2 and a light spectrum corresponding to a relative air mass of 1.5 G and the PC-ID software. The quantum efficiency of these cells was also measured. An important ratio of losses is localized in the emitters with a low resistance (40 Omega/ ). To decrease the Auger recombination in these emitters we have changed the phosphorous diffusion condition in the furnace in order to obtain shallower and low doping emitters (80 Omega/ ). A new paste for fingers and a metallization procedure were also developing. These new cells present an improvement in its efficiency of 3.5%.
  • Keywords
    Auger effect; electron-hole recombination; metallisation; silicon; solar cells; Auger recombination; Czocharalski-silicon photovoltaic cells; I-V measurements; Si; light spectrum; metallization procedure; monocrystalline solar cells; phosphorous diffusion condition; quantum efficiency; resistance 40 ohm; resistance 80 ohm; solar simulation illumination; surface irradiance; Doping; Electrical resistance measurement; Furnaces; Lighting; Loss measurement; Measurement standards; Photovoltaic cells; Radiative recombination; Software measurement; Software standards; Photovoltaic cell fabrication; Silicon; Solar energy; Spectral analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2007 Spanish Conference on
  • Conference_Location
    Madrid
  • Print_ISBN
    1-4244-0868-7
  • Type

    conf

  • DOI
    10.1109/SCED.2007.384040
  • Filename
    4271218