• DocumentCode
    3033702
  • Title

    FTUNSHADES2: A novel platform for early evaluation of robustness against SEE

  • Author

    Mogollon, J.M. ; Guzmán-Miranda, H. ; Nápoles, J. ; Barrientos, J. ; Aguirre, M.A.

  • Author_Institution
    Dept. of Electron. Eng., Univ. of Seville, Seville, Spain
  • fYear
    2011
  • fDate
    19-23 Sept. 2011
  • Firstpage
    169
  • Lastpage
    174
  • Abstract
    Large digital integrated circuits designed to solve space applications, have to be designed following standards that recommend to include hardening techniques against Single Event Phenomena caused by harsh radiation environments. It is specifically important in the case of modern deep-submicron technologies. Single Event Effects are phenomena related to the effects of radiation when ionizing particles hit the surface of semiconductors in certain critical areas, where the consequences are mainly data corruption or unexpected behavior with no permanent damage. Fault injection studies are a valuable methodology to evaluate the robustness of the circuit mainly in the early stages of the design. This paper introduces the second generation of the emulation-based fault injection platform FTUNSHADES supported by the European Space Agency, where new features have been included to fulfill with the demands of a growing community of users.
  • Keywords
    digital integrated circuits; integrated circuit design; radiation hardening (electronics); FTUNSHADES2; SEE; digital integrated circuits; emulation-based fault injection platform; hardening techniques; harsh radiation environments; modern deep-submicron technologies; semiconductor surface; single event effects; Circuit faults; Clocks; Field programmable gate arrays; Hardware; Registers; Single event upset; Testing; FPGA; Fault Injection; MBU; Microprocessors; SET; SEU; Single Event Effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
  • Conference_Location
    Sevilla
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0585-4
  • Type

    conf

  • DOI
    10.1109/RADECS.2011.6131392
  • Filename
    6131392