Broadened waveguide, low loss 1.5 μm InGaAsP/InP and 2 μm InGaAsSb/AlGaAsSb laser diodes

Author

Garbuzov, D. ; Menna, R. ; Lee, H. ; Martinelli, R. ; Connolly, J.C. ; Xu, L. ; Forrest, S.R.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

551

Lastpage

554

Abstract

We demonstrate that free carrier absorption in cladding layers of long wavelength (λ=1.5 μm and λ=2 μm), separate confinement quantum well laser diodes limits the differential efficiency and output power for such lasers if their waveguide thickness is designed from the considerations of the maximum optical confinement factor for quantum wells. Broadening of the waveguide up to 1 μm considerably increases laser efficiency and does not increase threshold for the lasers with low and moderate output losses. Broadened waveguide design provides the record output powers at continuous and quasi-continuous operation regimes

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical losses; quantum well lasers; waveguide lasers; 1.5 micron; 2 micron; InGaAsP-InP; InGaAsSb-AlGaAsSb; broadened waveguide; cladding layer; continuous operation; differential efficiency; free carrier absorption; loss; optical confinement factor; output power; quasi-continuous operation; separate confinement quantum well laser diode; threshold current density; Absorption; Carrier confinement; Diode lasers; Indium phosphide; Laser modes; Optical waveguides; Potential well; Power generation; Quantum well lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600226

Filename

600226