Title :
Terrestrial neutron-induced single-event burnout in SiC power diodes
Author :
Asai, Hiroaki ; Sugimoto, Kenji ; Nashiyama, Isamu ; Iide, Yoshiya ; Shiba, Kensuke ; Matsuda, Mieko ; Miyazaki, Yoshio
Author_Institution :
High-Reliability Eng. & Components Corp. (HIREC), Tsukuba, Japan
Abstract :
Tolerance against single-event burnout (SEB) caused by terrestrial neutrons is one of the urgent issues in practical application of SiC power devices. This paper presents evaluation results of neutron-induced SEB in SiC power diodes and differences between SiC and Si devices from the SEB stand point of view.
Keywords :
III-V semiconductors; power semiconductor diodes; radiation hardening (electronics); silicon compounds; wide band gap semiconductors; SiC; neutron-induced SEB; power devices; power diodes; terrestrial neutron-induced single-event burnout; Carbon; Neutrons; Particle beams; Radiation effects; Silicon; Silicon carbide; Testing; Power Devices; Silicon Carbide (SiC); Single Event Burnout; Terrestrial Neutron;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131401
