Title :
Impact of process variations on charge-sharing induced upset reversal in a 65nm flip-flop
Author :
Kauppila, A.V. ; Bhuva, B.L. ; Massengill, L.W. ; Holman, W.T. ; Ball, D.R.
Abstract :
Process variations impact the onset of charge sharing induced upset reversal by changing individual transistor behavior. It reduces or magnifies the ameliorating effect of charge reversal. This work analyzes the effect of variation on charge reversal in a 65nm flip-flop.
Keywords :
flip-flops; radiation hardening (electronics); ameliorating effect; charge-sharing-induced upset reversal; flip-flop; process variations; single-event upsets; size 65 nm; transistor behavior; CMOS integrated circuits; Correlation; Flip-flops; Integrated circuit modeling; Sensitivity; Threshold voltage; Transistors; Flip-flops; Process Parameter Variations; Pulse Reversal; Single event transient;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131405
