Title :
Enhancement of the total dose tolerance of a commercial CMOS active pixel sensor by use of thermal annealing
Author :
Armani, J.M. ; Barrochin, P. ; Joffre, F. ; Gaillard, R. ; Saigné, F. ; Mainguy, J.L.
Author_Institution :
CEA, LIST, Gif-sur-Yvette, France
Abstract :
We have studied the possibility of extending the lifespan under radiation of Active Pixel Sensors by subjecting them to high temperature heating cycles while being exposed to gamma rays. We found that thermal annealing of the sensors is effective and can improve their tolerance to total ionizing dose.
Keywords :
CMOS image sensors; annealing; radiation hardening (electronics); commercial CMOS active pixel sensor; gamma rays; high temperature heating cycles; thermal annealing; total dose tolerance enhancement; Annealing; Heating; Image sensors; Radiation effects; Temperature sensors; Active Pixel Sensor; CMOS Image Sensor; high temperature; ionizing dose; thermal annealing;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131409
