Title :
Analysis of critical dimension control for optical-, EB-, and X-ray lithography below the 0.2-/spl mu/m region
Author :
Fukuda, H. ; Okazaki, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Critical dimension (CD) control for optical-, EB-, and X-ray lithography is analyzed. In the 0.1 to 0.2-/spl mu/m region, processing factors such as diffusion of chemical species in resist films and mask edge accuracy become dominant. These make it difficult to achieve this scale with sufficient CD control even with post-optical lithography methods.
Keywords :
X-ray lithography; electron beam lithography; photolithography; 0.1 to 0.2 micron; EB lithography; X-ray lithography; chemical diffusion; critical dimension control; mask edge; optical lithography; resist films; Chemicals; Equations; Interference; Optical control; Optical films; Optical imaging; Optical sensors; Resists; Stimulated emission; X-ray lithography;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520866
