DocumentCode :
3034290
Title :
Analysis of critical dimension control for optical-, EB-, and X-ray lithography below the 0.2-/spl mu/m region
Author :
Fukuda, H. ; Okazaki, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear :
1995
fDate :
6-8 June 1995
Firstpage :
77
Lastpage :
78
Abstract :
Critical dimension (CD) control for optical-, EB-, and X-ray lithography is analyzed. In the 0.1 to 0.2-/spl mu/m region, processing factors such as diffusion of chemical species in resist films and mask edge accuracy become dominant. These make it difficult to achieve this scale with sufficient CD control even with post-optical lithography methods.
Keywords :
X-ray lithography; electron beam lithography; photolithography; 0.1 to 0.2 micron; EB lithography; X-ray lithography; chemical diffusion; critical dimension control; mask edge; optical lithography; resist films; Chemicals; Equations; Interference; Optical control; Optical films; Optical imaging; Optical sensors; Resists; Stimulated emission; X-ray lithography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
Type :
conf
DOI :
10.1109/VLSIT.1995.520866
Filename :
520866
Link To Document :
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