DocumentCode :
3035036
Title :
Dielectric properties of sputter-deposited BaTiO3-SrTiO 3 thin films
Author :
Miyasaka, Yoichi ; Matsubara, Shogo
Author_Institution :
NEC Corp., Kawasaki, Japan
fYear :
1990
fDate :
6-8 Jun 1990
Firstpage :
121
Lastpage :
124
Abstract :
The dielectric properties of (Ba1-x, Srx)TiO 3 thin films prepared by RF-magnetron sputtering were studied in terms of film composition and substrate temperature. The dielectric constant ε increased with increasing substrate temperature and depended on the Sr content x. A typical ε value for both SrTiO3 (x=1) and BaTiO3 (x=0) was about 250 on the films prepared at around 550°C. The dependence of ε on composition revealed maxima at x=0.5. The peak ε value depended on the preparation temperature of the target powder and ranged from 500 to 870 for films deposited at 600°C. With increasing measurement temperature, the ε value increased slightly in BaTiO3 and decreased in compositions with x>0.1. A peak of ε was observed only on the films with x=0.5 and having a ε value higher than 800. The peak was located at around -10°C and was very broad. A (Ba0.7Sr 0.3)TiO3 film prepared at 500°C showed a ε of 220 and a temperature coefficient of -70 ppm/°C
Keywords :
barium compounds; ferroelectric thin films; permittivity; sputter deposition; stoichiometry; strontium compounds; 500 to 870 K; Ba1-xSrxTiO3; RF-magnetron sputtering; composition; dielectric constant; dielectric properties; ferroelectrics; film composition; preparation temperature; thin films; Breakdown voltage; Capacitance; Crystallization; Dielectric measurements; Dielectric substrates; Dielectric thin films; Frequency; Powders; Sputtering; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location :
Urbana-Champaign, IL
Print_ISBN :
0-7803-0190-0
Type :
conf
DOI :
10.1109/ISAF.1990.200208
Filename :
200208
Link To Document :
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