• DocumentCode
    3035240
  • Title

    The electrical properties and epitaxial growth of LiNbO3 films by the MOD process

  • Author

    Vest, R.W. ; Wu, R. C Richard

  • Author_Institution
    Purdue Univ., West Lafayette, IN, USA
  • fYear
    1990
  • fDate
    6-8 Jun 1990
  • Firstpage
    170
  • Lastpage
    176
  • Abstract
    Lithium niobate films with grain sizes of 85 to 300 nm were prepared by the metallo-organic decomposition process on (110) sapphire substrates. The films were crack-free for single layer-fired thicknesses of 250 nm or less and had good transparency for grain sizes of 150 nm or less. Near 100% preferred (110) grain orientation was achieved by carrying out the thermal processing at a low oxygen partial pressure, and the films could be reoxidized without affecting the preferred orientation. The dielectric constants and dissipation factors were measured as a function of frequency for two different grain size LiNbO 3 films, and the divergence from single-crystal results for small grain size films is explained on the basis of interfacial polarization
  • Keywords
    dielectric polarisation; epitaxial growth; ferroelectric thin films; grain size; lithium compounds; oxidation; permittivity; (110) grain orientation; 85 to 300 nm; LiNbO3; crack-free; dielectric constants; dissipation factors; epitaxial growth; ferroelectrics; films; grain sizes; interfacial polarization; metallo-organic decomposition; reoxidized; single layer-fired thicknesses; thermal processing; transparency; Birefringence; Epitaxial growth; Grain size; Integrated optics; Molecular beam epitaxial growth; Optical films; Optical waveguides; Piezoelectric films; Sputtering; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
  • Conference_Location
    Urbana-Champaign, IL
  • Print_ISBN
    0-7803-0190-0
  • Type

    conf

  • DOI
    10.1109/ISAF.1990.200218
  • Filename
    200218