DocumentCode
3035348
Title
Unexpected charge losses from the floating gates of eeprom memory cells
Author
Allinger, Robert ; Kerber, Martin ; Mattausch, Hans Jürgen ; Braun, Helga
Author_Institution
Siemens AG
fYear
1996
fDate
1996
Firstpage
92
Lastpage
99
Keywords
Charge measurement; Current measurement; EPROM; Electric variables measurement; Electrons; Loss measurement; Manufacturing; Nonvolatile memory; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Technology, Design and Testing, 1996. Records of the 1996 IEEE International Workshop on
ISSN
1087-4852
Print_ISBN
0-8186-7466-0
Type
conf
DOI
10.1109/MTDT.1996.782498
Filename
782498
Link To Document