Relaxor ceramic dielectric materials for multilayer ceramic capacitors

Author

Yamashita, Y.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1990

fDate

6-8 Jun 1990

Firstpage

241

Lastpage

245

Abstract

The formation of a perovskite structure of lead zinc niobate (PZN) has been accomplished by multi-ion substitution. Nine different low-firing-type dielectric materials for a multilayer ceramic capacitor, based on modified PZN with K values ranging from 18000 to 400, were developed. The PZN-based dielectrics have 1.5 times larger K values in the same temperature coefficient of capacitance, high electrical resistivity, low dissipation factor, and low DC bias dependency, compared to conventional BaTiO₃-based dielectrics

Keywords

capacitors; ceramics; electronic conduction in insulating thin films; ferroelectric devices; ferroelectric materials; ferroelectric thin films; lead compounds; permittivity; DC bias dependency; PbZn_0.33O₃Nb_0.66O₃; capacitance; dissipation factor; electrical resistivity; ferroelectric ceramic; low-firing-type dielectric materials; modified PZN; multi-ion substitution; multilayer ceramic capacitor; perovskite structure; relaxor materials; temperature coefficient; Capacitors; Ceramics; Dielectric materials; Firing; Grain size; High K dielectric materials; High-K gate dielectrics; Iron; Nonhomogeneous media; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on

Conference_Location

Urbana-Champaign, IL

Print_ISBN

0-7803-0190-0

Type

conf

DOI

10.1109/ISAF.1990.200233

Filename

200233