Title :
High-frequency performance of graphene field effect transistors with saturating IV-characteristics
Author :
Meric, Inanc ; Dean, Cory R. ; Han, Shu-Jen ; Wang, Lei ; Jenkins, Keith A. ; Hone, James ; Shepard, K.L.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias dependence of fT and fmax and the effect of the ambipolar channel on transconductance and output resistance are also examined.
Keywords :
boron compounds; field effect transistors; graphene; ambipolar channel; bias dependence; boron nitride gate dielectrics; graphene field effect transistors; high frequency performance; output resistance; saturating IV characteristics; transconductance; Contact resistance; Current measurement; Dielectrics; Logic gates; Performance evaluation; Radio frequency; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131472
