DocumentCode
3035564
Title
Electrical properties of chemically derived (Pb,La)TiO3 thin films
Author
Schwartz, R.W. ; Tuttle, B.A. ; Doughty, D.H. ; Land, C.E. ; Goodnow, D.C. ; Hernandez, C.L. ; Zender, T.J. ; Martinez, S.L.
Author_Institution
Sandia Nat. Lab., Albuquerque, NM, USA
fYear
1990
fDate
6-8 Jun 1990
Firstpage
254
Lastpage
257
Abstract
Ferroelectric lead lanthanum titanate (PLT) thin films with compositions varying from pure PbTiO3 to PLT 25/100 (0 to 25 mol.% La) were prepared by spin-casting 0.25 M solutions containing metallo-organic precursors of Pb, La and Ti. The as-deposited amorphous films were crystallized into the perovskite structure by heat treatment at temperatures between 450 and 650°C. Dielectric and ferroelectric properties of the thin (410-nm) films were characterized. The dielectric constants of the films varied from ~80 to ~690 for La contents varying from 0 to 25 mol.%, respectively. Dissipation factors varied from ~0.03 to ~0.09 over the same compositional range. Also studied was the temperature dependence of the dielectric properties in order to determine the effects of La content on the Curie point (T c ). It is as found that T c decreased with increasing La concentration. Coercive field and remanent polarization also decreased with increased La concentration. Hysteresis loops became slim and more symmetric with increasing La content
Keywords
crystallisation; dielectric hysteresis; dielectric polarisation; ferroelectric Curie temperature; ferroelectric thin films; heat treatment; lead compounds; permittivity; stoichiometry; (PbLa)TiO3; 410 nm; 450 to 650 degC; Curie point; La contents; PLT; PbTiO3; as-deposited amorphous films; chemically derived (Pb,La)TiO3; coercive field; compositions; crystallisation; dielectric constants; dielectric properties; dissipation factors; ferroelectric properties; ferroelectric thin films; heat treatment; hysteresis loops; metallo-organic precursors; perovskite structure; remanent polarization; spin-casting; temperature dependence; Amorphous materials; Chemicals; Crystallization; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Lanthanum; Lead; Titanium compounds; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1990., IEEE 7th International Symposium on
Conference_Location
Urbana-Champaign, IL
Print_ISBN
0-7803-0190-0
Type
conf
DOI
10.1109/ISAF.1990.200236
Filename
200236
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