• DocumentCode
    3036009
  • Title

    Tensile test of single crystal silicon film at elevated temperatures

  • Author

    Nakao, S. ; Ando, T. ; Shikida, M. ; Sato, K.

  • Author_Institution
    Dept. of Micro-Nano Syst. Eng., Nagoya Univ., Japan
  • fYear
    2004
  • fDate
    31 Oct.-3 Nov. 2004
  • Firstpage
    63
  • Lastpage
    67
  • Abstract
    A tensile-testing system that allows tests at elevated temperature was developed. Using this system, we evaluated the mechanical properties of micro-scale single-crystal silicon film at 573 K. The silicon test specimens had a surface orientation of (100), and a tensile direction of <110>, The average measured Young´s modulus and fracture stress were 144 GPa and 5.19 GPa, respectively, at 573 K. At room temperature, Young´s modulus and fracture stress were 137 GPa and 4.89 GPa. These similar values show that the mechanical properties of single-crystal silicon film hardly change at 573 K compared to room temperature.
  • Keywords
    Young´s modulus; elemental semiconductors; fracture; micromechanical devices; semiconductor thin films; silicon; tensile testing; 20 degC; 573 K; MEMS; Si; Young modulus; elevated temperatures; fracture stress; mechanical properties; room temperature; single crystal film; surface orientation; tensile direction; tensile test; Materials testing; Mechanical factors; Mechanical variables measurement; Micromechanical devices; Semiconductor films; Silicon; Strain measurement; System testing; Temperature; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro-Nanomechatronics and Human Science, 2004 and The Fourth Symposium Micro-Nanomechatronics for Information-Based Society, 2004. Proceedings of the 2004 International Symposium on
  • Print_ISBN
    0-7803-8607-8
  • Type

    conf

  • DOI
    10.1109/MHS.2004.1421278
  • Filename
    1421278