Transistor matching and silicon thickness variation in ETSOI technology

In this work we examine threshold voltage matching as a function of silicon thickness variation in ETSOI (Extremely Thin Silicon On Insulator) transistors. Analysis of silicon thickness data in terms of threshold voltage and direct experimental measurements of matching lead to several specific observations: that mismatch due to silicon thickness variation is not random and is not therefore to be described by the conventional area dependence; that adjacent transistors are very closely matched; that silicon wafer processing can modulate the variation and therefore the matching.