Title :
Large-signal analysis of p-type GaAs IMPATT diode
Author :
El-Badawy, El-Sayed A. ; Ibrahim, Said H.
Author_Institution :
Fac. of Eng., Alexandria Univ., Egypt
Abstract :
This paper presents a detailed study of p-type GaAs IMPATT diodes. This is important in order to obtain better insight into the operation of this diode type, which is not sufficiently studied. Hence, it is possible to design and optimize the structure of the double-drift GaAs IMPATT and the circuit where this IMPATT is embedded. Some important conclusions concerning the effect of the peak value of the microwave signal on IMPATT operation are drawn
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; optimisation; semiconductor device models; GaAs; IMPATT operation; circuit-embedded IMPATT diode; diode operation; diode structure design; diode structure optimization; double-drift GaAs IMPATT; large-signal analysis; microwave signal; p-type GaAs IMPATT diode; Charge carriers; Computer science; Delay effects; Design optimization; Diodes; Doping; Gallium arsenide; Microwave circuits; Optimized production technology; Radio frequency;
Conference_Titel :
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location :
Tehran
Print_ISBN :
964-360-057-2
DOI :
10.1109/ICM.2000.916431
