Title :
High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules
Author :
Han, Genquan ; Su, Shaojian ; Zhan, Chunlei ; Zhou, Qian ; Yang, Yue ; Wang, Lanxiang ; Guo, Pengfei ; Wei, Wang ; Wong, Choun Pei ; Shen, Ze Xiang ; Cheng, Buwen ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
The first demonstration of GeSn pMOSFETs was reported. Key highlights of this work also includes a 180 °C GeSn MBE growth, sub-370 °C Si2H6 surface passivation and gate stack process for GeSn, and an implantless metallic NiGeSn S/D formed at 350 °C. A hole mobility of 430 cm2/Vs is obtained for GeSn pMOSFETs, which is 66% higher than that of the Ge control pMOSFETs. GeSn pMOSFETs show a 64% lower S/D resistance as compared to the Ge control devices.
Keywords :
MOSFET; electric resistance; germanium alloys; hole mobility; molecular beam epitaxial growth; nickel alloys; passivation; semiconductor growth; semiconductor materials; tin alloys; Ge control device; GeSn-NiGeSn; MBE growth; gate stack process; high-mobility germanium-tin p-channel MOSFET; hole mobility; lower S-D resistance; metallic source-drain; pMOSFET; process module; surface passivation; temperature 180 degC; temperature 350 degC; temperature 370 degC; Films; Logic gates; MOSFETs; Resistance; Silicon; Strain; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131569
