Title :
Structural improvement of amorphous silicon using metal-induced crystallization
Author :
Khakifirooz, Ali ; Haji, Saber ; Mohajerzadeh, S. Shamsoddin ; Soleimani, E. Asl
Author_Institution :
ECE Dept., Tehran Univ., Iran
Abstract :
In this paper, two new techniques are reported to lower the crystallization temperature of amorphous silicon (a-Si) on ordinary glass down to 400°C. UV light exposure was used during nickel-induced crystallization, resulting in an improved crystallization rate. Also, the effect of applying an electric field during metal-induced lateral crystallization is studied. A lateral growth of 300 μm is observed by annealing the sample at 400°C for 30 min, with applying an electric field of 100 V/cm. XRD and SEM are employed to study the morphological structure of the samples
Keywords :
X-ray diffraction; amorphous semiconductors; crystal morphology; crystallisation; electric field effects; elemental semiconductors; recrystallisation annealing; scanning electron microscopy; semiconductor technology; semiconductor thin films; silicon; ultraviolet radiation effects; 30 min; 300 micron; 400 C; Ni; SEM; Si; UV light exposure; XRD; a-Si structural improvement; amorphous silicon; annealing; crystallization rate; crystallization temperature; electric field; electric field effect; glass substrate; lateral growth; metal-induced crystallization; metal-induced lateral crystallization; morphological structure; nickel-induced crystallization; structural improvement; Amorphous silicon; Annealing; Crystallization; Fabrication; Glass; Microwave integrated circuits; Scanning electron microscopy; Substrates; Temperature; Thin film transistors;
Conference_Titel :
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location :
Tehran
Print_ISBN :
964-360-057-2
DOI :
10.1109/ICM.2000.916452
